The technology developed by the laboratory aims to provide infrared detectors in double-metal patch geometry. In this type of geometry, the absorbing zone is inserted between two metal layers, which form a microcavity that can also act as an antenna for infrared radiation. This geometry allows an increased responsiveness and a significant reduction of the detector’s dark current. In addition, the technology has a very high operating temperature limit compared to competing solutions, ease of production and high spatial uniformity.
Priority number : EP20140305016 20140107
Infrared detection - Dark current - Temperature BLIP Cryogenic temperature operation - Semiconductor detectors
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